Invention Grant
US08294448B2 Semiconductor memory power control system with voltage generator to supply voltage to an internal circuit by boosting an external voltage
有权
具有电压发生器的半导体存储器功率控制系统，通过升压外部电压向内部电路供电
- Patent Title: Semiconductor memory power control system with voltage generator to supply voltage to an internal circuit by boosting an external voltage
- Patent Title (中): 具有电压发生器的半导体存储器功率控制系统，通过升压外部电压向内部电路供电
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Application No.: US12624799Application Date: 2009-11-24
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Publication No.: US08294448B2Publication Date: 2012-10-23
- Inventor: Atsushi Nakakubo
- Applicant: Atsushi Nakakubo
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2008-311007 20081205
- Main IPC: G05F5/00
- IPC: G05F5/00 ; G05F1/24
Abstract:
A semiconductor device is provides which includes: a first boost circuit that generates a first boost voltage by boosting an external voltage and supplies the first boost voltage to an internal circuit; and a first circuit that supplies the external voltage to an output of the first boost circuit when power is turned on and supplies the first boost voltage to the output of the first boost circuit when the external voltage reaches a given voltage.
Public/Granted literature
- US20100066339A1 SEMICONDUCTOR DEVICE AND SYSTEM Public/Granted day:2010-03-18
Information query
IPC分类:
