Invention Grant
US08294510B2 CMOS circuit and semiconductor device with multiple operation mode biasing
失效
CMOS电路和具有多种工作模式偏置的半导体器件
- Patent Title: CMOS circuit and semiconductor device with multiple operation mode biasing
- Patent Title (中): CMOS电路和具有多种工作模式偏置的半导体器件
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Application No.: US12521263Application Date: 2007-12-11
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Publication No.: US08294510B2Publication Date: 2012-10-23
- Inventor: Kiyoo Itoh , Masanao Yamaoka
- Applicant: Kiyoo Itoh , Masanao Yamaoka
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-349494 20061226; JP2007-020381 20070131
- International Application: PCT/JP2007/073849 WO 20071211
- International Announcement: WO2008/078549 WO 20080703
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
There is provided an output stage circuit including such MOSTs (M) that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, wherein upon its deactivation, a voltage is applied to the gate of each of the MOSTs (M) in such a manner than a reverse bias is applied between the gate and source of the MOST (M). That is, when the MOST (M) is of a p channel type, a voltage higher than that of a p type source is applied to its gate. When the MOST (M) is of an n channel type, a voltage lower than that of an n type source is applied to its gate. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage. A CMOS circuit and a semiconductor device can be realized each of which is small in leakage current even though its threshold voltage is low and which is operated at high speed and with a small voltage amplitude.
Public/Granted literature
- US20100097129A1 CMOS Circuit and Semiconductor Device Public/Granted day:2010-04-22
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