Invention Grant
- Patent Title: Electrostatic chuck and substrate processing apparatus having same
- Patent Title (中): 具有该静电吸盘和基板处理装置
-
Application No.: US12581343Application Date: 2009-10-19
-
Publication No.: US08295026B2Publication Date: 2012-10-23
- Inventor: Shoichiro Matsuyama
- Applicant: Shoichiro Matsuyama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-291376 20081113
- Main IPC: H01T23/00
- IPC: H01T23/00

Abstract:
In an electrostatic chuck provided inside a processing chamber of a substrate processing apparatus and including a high voltage electrode plate for electrostatically attracting a target substrate, a heater includes a plate-shaped resistor and two electrode plates respectively brought into surface-contact with a front surface and a rear surface of the resistor, and one of the two electrode plates of the heater serves as the high voltage electrode plate for electrostatically attracting the target substrate.
Public/Granted literature
- US20100118464A1 ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS HAVING SAME Public/Granted day:2010-05-13
Information query