Invention Grant
- Patent Title: Semiconductor switching device
- Patent Title (中): 半导体开关装置
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Application No.: US12172454Application Date: 2008-07-14
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Publication No.: US08295784B2Publication Date: 2012-10-23
- Inventor: Toshiki Seshita
- Applicant: Toshiki Seshita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-189027 20070720
- Main IPC: H04B1/44
- IPC: H04B1/44

Abstract:
A semiconductor switching device includes, on one semiconductor substrate: a switching circuit configured to switch connection states between a plurality of terminals; a negative voltage generating circuit; and a control circuit connected to the switching circuit and the negative voltage generating circuit and configured to supply a control signal to the switching circuit, the control circuit including: a level shift circuit with a low-potential power supply terminal connected to the negative voltage generating circuit and an output node connected to the switching circuit, the level shift circuit being configured to supply a negative potential signal as a control signal at a low level to the switching circuit; a diode with its anode connected to the output node of the level shift circuit; and a transistor with its drain-source path connected between the cathode of the diode and ground, the drain-source path switching from a blocking state to a conducting state before the potential of the output node of the level shift circuit switches from a high level to the low level.
Public/Granted literature
- US20090023415A1 SEMICONDUCTOR SWITCHING DEVICE Public/Granted day:2009-01-22
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