Invention Grant
- Patent Title: Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
- Patent Title (中): 预测等离子体室的蚀刻速率均匀性的方法和装置
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Application No.: US12826562Application Date: 2010-06-29
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Publication No.: US08295966B2Publication Date: 2012-10-23
- Inventor: Brian D Choi , Gunsu Yun , Vijayakumar C Venugopal
- Applicant: Brian D Choi , Gunsu Yun , Vijayakumar C Venugopal
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: IPSG, P.C. Intellectual Property Law
- Main IPC: G06F19/00
- IPC: G06F19/00 ; H01L21/00 ; C23C16/00

Abstract:
A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.
Public/Granted literature
- US20100332013A1 METHODS AND APPARATUS TO PREDICT ETCH RATE UNIFORMITY FOR QUALIFICATION OF A PLASMA CHAMBER Public/Granted day:2010-12-30
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