Invention Grant
- Patent Title: MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same
- Patent Title (中): 具有基本垂直侧壁的支撑结构的MEMS器件及其制造方法
-
Application No.: US12766702Application Date: 2010-04-23
-
Publication No.: US08298847B2Publication Date: 2012-10-30
- Inventor: Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
- Applicant: Lior Kogut , Chun-Ming Wang , Chengbin Qui , Stephen Zee , Fan Zhong
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
Public/Granted literature
Information query
IPC分类: