Invention Grant
- Patent Title: Package structure of compound semiconductor device and fabricating method thereof
- Patent Title (中): 化合物半导体器件的封装结构及其制造方法
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Application No.: US12856052Application Date: 2010-08-13
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Publication No.: US08298861B2Publication Date: 2012-10-30
- Inventor: Pin Chuan Chen , Shen Bo Lin
- Applicant: Pin Chuan Chen , Shen Bo Lin
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: TW97105846A 20080220
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film.
Public/Granted literature
- US20100304535A1 PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2010-12-02
Information query
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