Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12902822Application Date: 2010-10-12
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Publication No.: US08299841B2Publication Date: 2012-10-30
- Inventor: Jun Fukuhara , Tsuyoshi Mitsuda
- Applicant: Jun Fukuhara , Tsuyoshi Mitsuda
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-244622 20091023
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A semiconductor device according to an exemplary embodiment of the present invention includes a discharge circuit and a control circuit. The discharge circuit includes a first transistor connected between a gate of an output transistor and an output terminal, and a capacitor connected to a gate of the first transistor, and discharges a gate voltage of the output transistor to the output terminal by turning on the first transistor with an electric charge of the capacitor. The control circuit includes a charge path, a first discharge path, and a second discharge path. The first discharge path discharges an electric charge of the charged capacitor when the system turns off. The second discharge path discharges the electric charge of the capacitor for a time period longer than a time period for discharging the output transistor by the discharge circuit upon detection of an abnormality in the system.
Public/Granted literature
- US20110095738A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-04-28
Information query
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