Invention Grant
- Patent Title: Internal voltage generating circuit of semiconductor device
- Patent Title (中): 半导体器件的内部电压发生电路
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Application No.: US13274644Application Date: 2011-10-17
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Publication No.: US08299846B2Publication Date: 2012-10-30
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0038293 20080424
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
An internal voltage generating circuit of a semiconductor device includes a first voltage driver configured to pull up an internal voltage terminal during a period where a level of the internal voltage terminal is lower than a target level, and a second voltage driver configured to pull up the internal voltage terminal during a predefined time in each period corresponding to a frequency of an external clock.
Public/Granted literature
- US20120032734A1 INTERNAL VOLTAGE GENERATING CIRCUIT OF SEMICONDUCTOR DEVICE Public/Granted day:2012-02-09
Information query
IPC分类:
