Invention Grant
US08299856B2 Power transistor output match network with high Q RF path and low Q low frequency path
有权
功率晶体管输出与高Q RF路径和低Q低频路径匹配网络
- Patent Title: Power transistor output match network with high Q RF path and low Q low frequency path
- Patent Title (中): 功率晶体管输出与高Q RF路径和低Q低频路径匹配网络
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Application No.: US12973613Application Date: 2010-12-20
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Publication No.: US08299856B2Publication Date: 2012-10-30
- Inventor: Cynthia Blair
- Applicant: Cynthia Blair
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03F3/191
- IPC: H03F3/191

Abstract:
A power circuit includes a power device, an output match network and a bypass network. The output match network is coupled to an output of the power device and includes a blocking capacitor which forms part of a high quality factor RF path of the output match network. The output match network is operable to provide a range of impedance matching over a signal bandwidth and a low frequency gain peak outside the signal bandwidth which corresponds to a low frequency resonance of the high quality factor RF path. The bypass network is coupled in parallel with the blocking capacitor of the output match network. The bypass network is operable to attenuate the low frequency gain peak while maintaining the high quality factor RF path.
Public/Granted literature
- US20120154053A1 Power Transistor Output Match Network with High Q RF Path and Low Q Low Frequency Path Public/Granted day:2012-06-21
Information query
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