Invention Grant
US08300031B2 Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element 有权
半导体器件包括通过电流 - 电压转换元件连接栅极和漏极的晶体管

Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
Abstract:
When a signal inputted to a pixel is erased by setting potentials of a gate terminal and a source terminal of a driving transistor to be equal, a current slightly flows through the driving transistor in some cases, which leads to occur a display defect. The invention provides a display device which improves the yield while suppressing the increase in manufacturing cost. When a potential of a scan line for erasure is raised, a potential of the gate terminal of the driving transistor is raised accordingly. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.
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