Invention Grant
US08300031B2 Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
有权
半导体器件包括通过电流 - 电压转换元件连接栅极和漏极的晶体管
- Patent Title: Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
- Patent Title (中): 半导体器件包括通过电流 - 电压转换元件连接栅极和漏极的晶体管
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Application No.: US11391373Application Date: 2006-03-29
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Publication No.: US08300031B2Publication Date: 2012-10-30
- Inventor: Hajime Kimura
- Applicant: Hajime Kimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-121917 20050420
- Main IPC: G06F3/038
- IPC: G06F3/038

Abstract:
When a signal inputted to a pixel is erased by setting potentials of a gate terminal and a source terminal of a driving transistor to be equal, a current slightly flows through the driving transistor in some cases, which leads to occur a display defect. The invention provides a display device which improves the yield while suppressing the increase in manufacturing cost. When a potential of a scan line for erasure is raised, a potential of the gate terminal of the driving transistor is raised accordingly. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.
Public/Granted literature
- US20060238135A1 Semiconductor device and display device Public/Granted day:2006-10-26
Information query
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