Invention Grant
US08300451B2 Two word line SRAM cell with strong-side word line boost for write provided by weak-side word line
有权
两个字线SRAM单元,具有强边字线升压,由弱边字线提供
- Patent Title: Two word line SRAM cell with strong-side word line boost for write provided by weak-side word line
- Patent Title (中): 两个字线SRAM单元,具有强边字线升压,由弱边字线提供
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Application No.: US12750270Application Date: 2010-03-30
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Publication No.: US08300451B2Publication Date: 2012-10-30
- Inventor: Hugh T. Mair , Theodore W. Houston
- Applicant: Hugh T. Mair , Theodore W. Houston
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/00

Abstract:
An integrated circuit having a static random access memory (SRAM) includes an array of SRAM cells arranged in rows and columns having a write word line and a read/write word line connected to provide row access to the array of SRAM cells. The SRAM also includes a coupling capacitance connected between the write word line and a detachable allocation of the read/write word line as well as an overdrive module connected to charge the coupling capacitance and provide an overdrive voltage on the detachable allocation of the read/write word line during activation of the write word line. A method of operating an integrated circuit having an SRAM includes providing an overdrive voltage on the detachable allocation of the read/write word line corresponding to a charge redistribution across the coupling capacitance during part of a write cycle.
Public/Granted literature
- US20110242879A1 TWO WORD LINE SRAM CELL WITH STRONG-SIDE WORD LINE BOOST FOR WRITE PROVIDED BY WEAK-SIDE WORD LINE Public/Granted day:2011-10-06
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