Invention Grant
- Patent Title: Scalable nonvolatile memory
- Patent Title (中): 可扩展的非易失性存储器
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Application No.: US13028710Application Date: 2011-02-16
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Publication No.: US08300455B2Publication Date: 2012-10-30
- Inventor: E. James Torok , David Leslie Fleming , Edward Wuori , Richard Spitzer
- Applicant: E. James Torok , David Leslie Fleming , Edward Wuori , Richard Spitzer
- Applicant Address: US CA Berkeley
- Assignee: Integrated MagnetoElectronics
- Current Assignee: Integrated MagnetoElectronics
- Current Assignee Address: US CA Berkeley
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
Public/Granted literature
- US20110211387A1 SCALABLE NONVOLATILE MEMORY Public/Granted day:2011-09-01
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