Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12695364Application Date: 2010-01-28
-
Publication No.: US08300487B2Publication Date: 2012-10-30
- Inventor: Tomonori Hayashi
- Applicant: Tomonori Hayashi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2009-023885 20090204
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device comprises a plurality of terminals, a plurality of drive units corresponding to the plurality of terminals, and a data control unit. The data control unit outputs parallel data applied to the plurality of terminals to the plurality of drive unit in a normal operation mode, and converts serial data applied to a particular terminal, which is one of the plurality of terminals, to parallel data, and outputs the parallel data to which the serial data applied to the particular terminal is converted to the plurality of drive units in a test mode.
Public/Granted literature
- US20100195428A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-08-05
Information query