Invention Grant
- Patent Title: Deposit removing method and substrate processing method
- Patent Title (中): 沉积物去除方法和基板处理方法
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Application No.: US12389057Application Date: 2009-02-19
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Publication No.: US08303719B2Publication Date: 2012-11-06
- Inventor: Sungtae Lee , Yusuke Nakagawa , Jun Yashiro
- Applicant: Sungtae Lee , Yusuke Nakagawa , Jun Yashiro
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-039358 20080220
- Main IPC: B08B9/08
- IPC: B08B9/08 ; B08B5/00

Abstract:
A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber.
Public/Granted literature
- US20090205678A1 DEPOSIT REMOVING METHOD AND SUBSTRATE PROCESSING METHOD Public/Granted day:2009-08-20
Information query
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