Invention Grant
- Patent Title: Method for exfoliation of hexagonal boron nitride
- Patent Title (中): 六方氮化硼剥离方法
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Application No.: US12546185Application Date: 2009-08-24
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Publication No.: US08303922B2Publication Date: 2012-11-06
- Inventor: Yi Lin , John W. Connell
- Applicant: Yi Lin , John W. Connell
- Applicant Address: US DC Washington
- Assignee: The United States of America as represeted by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: The United States of America as represeted by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Agent Andrea Z. Warmbier; Thomas K. McBride, Jr.; Linda B. Blackburn
- Main IPC: C01B21/064
- IPC: C01B21/064 ; C01B35/10 ; C01B35/00 ; B29C47/00 ; C07K1/00 ; C07K14/00 ; C07K16/00 ; C07C205/00 ; A62D3/00 ; B01J19/12 ; C08F110/00 ; C08G73/10

Abstract:
A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.
Public/Granted literature
- US20110045223A1 Method for Exfoliation of Hexagonal Boron Nitride Public/Granted day:2011-02-24
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