Atomic layer deposition in a roll-to-roll manufacturing environment is disclosed. At least a portion of a substrate from a first roll is disposed in a chamber. A first atomic layer deposition (ALD) half reaction is performed on the portion of the substrate while the portion is within the chamber. A subsequent ALD half reaction may be performed on the same portion of the substrate to form a layer of material. Multiple ALD sequences may be performed by passing the substrate through a sequence of ALD reaction chambers or by passing the substrate through one or more ALD reaction chambers in a continuous loop.