Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same

Invention Grant

US08304284B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same 有权

Title translation: 采用选择性制造的碳纳米管可逆电阻切换元件的存储单元及其形成方法

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Patent Title: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
Patent Title (中): 采用选择性制造的碳纳米管可逆电阻切换元件的存储单元及其形成方法
Application No.: US12410771

Application Date: 2009-03-25
Publication No.: US08304284B2

Publication Date: 2012-11-06
Inventor: April D. Schricker
Applicant: April D. Schricker
Applicant Address: US CA Milpitas
Assignee: SanDisk 3D LLC
Current Assignee: SanDisk 3D LLC
Current Assignee Address: US CA Milpitas
Agency: Dugan & Dugan, PC
Main IPC: H01L21/44
IPC: H01L21/44

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same

Abstract:

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (“CNT”) seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.

Abstract(Chinese):

在一些方面，提供了一种制造存储单元的方法，其包括在基板上制造操纵元件，并且通过以下方式制造通过制造碳纳米管（CNT）种子层而与转向元件相连的可逆电阻开关元件在衬底上方的硅 - 锗层，图案化和蚀刻CNT籽晶层，并且在CNT籽晶层上选择性地制造CNT材料。提供了许多其他方面。

Public/Granted literature

US20090256130A1 MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT, AND METHODS OF FORMING THE SAME Public/Granted day:2009-10-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的