Fabrication of devices having different interfacial oxide thickness via lateral oxidation

Invention Grant

US08304306B2 Fabrication of devices having different interfacial oxide thickness via lateral oxidation 有权

Title translation: 通过侧面氧化制备具有不同界面氧化物厚度的器件

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Patent Title: Fabrication of devices having different interfacial oxide thickness via lateral oxidation
Patent Title (中): 通过侧面氧化制备具有不同界面氧化物厚度的器件
Application No.: US13073110

Application Date: 2011-03-28
Publication No.: US08304306B2

Publication Date: 2012-11-06
Inventor: Jin Cai , Eduard A. Cartier , Martin M. Frank , Marwan H. Khater
Applicant: Jin Cai , Eduard A. Cartier , Martin M. Frank , Marwan H. Khater
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Vazken Alexanian
Main IPC: H01L21/8238
IPC: H01L21/8238

Fabrication of devices having different interfacial oxide thickness via lateral oxidation

Abstract:

A method for forming a semiconductor device includes forming a first field effect transistor (FET) and a second FET on a substrate, the first FET comprising a first interfacial oxide layer, and the second FET comprising a second interfacial oxide layer; encapsulating the first interfacial oxide layer of the first FET; and performing lateral oxidation of the second interfacial oxide layer of the second FET, wherein the lateral oxidation of the second interfacial oxide layer of the second FET converts a portion of the substrate located underneath the second FET into additional interfacial oxide.

Abstract(Chinese):

一种用于形成半导体器件的方法包括在衬底上形成第一场效应晶体管（FET）和第二FET，所述第一FET包括第一界面氧化物层，所述第二FET包括第二界面氧化物层; 封装第一FET的第一界面氧化物层; 以及执行第二FET的第二界面氧化物层的侧向氧化，其中第二FET的第二界面氧化物层的侧向氧化将位于第二FET下面的衬底的一部分转换为另外的界面氧化物。

Public/Granted literature

US20120248537A1 FABRICATION OF DEVICES HAVING DIFFERENT INTERFACIAL OXIDE THICKNESS VIA LATERAL OXIDATION Public/Granted day:2012-10-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS