Semiconductor device and its manufacturing method

Invention Grant

US08304313B2 Semiconductor device and its manufacturing method 有权

Title translation: 半导体器件及其制造方法

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Patent Title: Semiconductor device and its manufacturing method
Patent Title (中): 半导体器件及其制造方法
Application No.: US10585128

Application Date: 2005-08-12
Publication No.: US08304313B2

Publication Date: 2012-11-06
Inventor: Koichiro Tanaka , Atsuo Isobe , Yoshiaki Yamamoto
Applicant: Koichiro Tanaka , Atsuo Isobe , Yoshiaki Yamamoto
Applicant Address: JP Atsugi-shi, Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
Agency: Robinson Intellectual Property Law Office, P.C.
Agent Eric J. Robinson
Priority: JP2004-243044 20040823
International Application: PCT/JP2005/015114 WO 20050812
International Announcement: WO2006/022196 WO 20060302
Main IPC: H01L21/8236
IPC: H01L21/8236

Semiconductor device and its manufacturing method

Abstract:

It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.

Abstract(Chinese):

本发明的目的是提供一种激光照射装置和方法，该激光照射装置和方法可以降低整个照射区域中的微晶区域的比例，并且可以用激光束均匀地照射半导体膜。从激光振荡器发射的激光束的低强度部分被狭缝阻挡，激光束被反射镜偏转，并且通过使用两个凸柱面透镜将光束成形为期望的尺寸。然后，激光束被传送到照射表面。

Public/Granted literature

US20090173893A1 Semiconductor device and its manufacturing method Public/Granted day:2009-07-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8236	........增强型和耗尽型晶体管的组合