Invention Grant
- Patent Title: Electrode structure, semiconductor element, and methods of manufacturing the same
- Patent Title (中): 电极结构，半导体元件及其制造方法
-
Application No.: US13269153Application Date: 2011-10-07
-
Publication No.: US08304335B2Publication Date: 2012-11-06
- Inventor: Shigeru Koumoto , Tatsuya Sasaki , Kazuhiro Shiba , Masayoshi Sumino
- Applicant: Shigeru Koumoto , Tatsuya Sasaki , Kazuhiro Shiba , Masayoshi Sumino
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-354091 20061228
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.
Public/Granted literature
- US20120028456A1 ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2012-02-02
Information query
IPC分类:
