Invention Grant
- Patent Title: Charged particle beam system
- Patent Title (中): 带电粒子束系统
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Application No.: US12944434Application Date: 2010-11-11
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Publication No.: US08304725B2Publication Date: 2012-11-06
- Inventor: Osamu Komuro , Osamu Nasu
- Applicant: Osamu Komuro , Osamu Nasu
- Applicant Address: JP Tokyo
- Assignee: Hitachi High Technologies Corporation
- Current Assignee: Hitachi High Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-079908 20060323
- Main IPC: G01N23/227
- IPC: G01N23/227

Abstract:
A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.
Public/Granted literature
- US20110057101A1 CHARGED PARTICLE BEAM SYSTEM Public/Granted day:2011-03-10
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