Invention Grant
US08304779B2 Thin film transistor, and display device having the thin film transistor
有权
薄膜晶体管和具有薄膜晶体管的显示装置
- Patent Title: Thin film transistor, and display device having the thin film transistor
- Patent Title (中): 薄膜晶体管和具有薄膜晶体管的显示装置
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Application No.: US12258569Application Date: 2008-10-27
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Publication No.: US08304779B2Publication Date: 2012-11-06
- Inventor: Shunpei Yamazaki , Yasuhiro Jinbo
- Applicant: Shunpei Yamazaki , Yasuhiro Jinbo
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-284717 20071101
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
Public/Granted literature
- US20090114921A1 THIN FILM TRANSISTOR, AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR Public/Granted day:2009-05-07
Information query
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