A lack of exposure margin is avoided in a region, where an interconnection is required in a direction different from that of an interconnection of a region where an exposure condition is optimized. A semiconductor device According to an aspect of the invention includes a semiconductor substrate 201; an interlayer insulating film 202 that is formed on the semiconductor substrate 201; a plurality of first interconnections 1, 1, . . . that are formed in a first region on the interlayer insulating film 202 while complying with a first design rule, the first interconnections running along a specific direction; a plurality of second interconnections 2, 2, . . . that are formed in a second region on the interlayer insulating film 202 while complying with a second design rule identical to the first design rule, the second interconnections running along the same direction with that of the first interconnections 1, 1, . . . ; and a connection member 3 that is formed in the interlayer insulating film 202, the connection member forming a desired interconnection pattern by electrically connecting at least the two second interconnections 2 and 2 that should become an identical potential.