Invention Grant
US08304913B2 Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby
有权
形成完全嵌入的无凸起积聚层包装的方法和由此形成的结构
- Patent Title: Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby
- Patent Title (中): 形成完全嵌入的无凸起积聚层包装的方法和由此形成的结构
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Application No.: US12890045Application Date: 2010-09-24
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Publication No.: US08304913B2Publication Date: 2012-11-06
- Inventor: Ravi K Nalla , Pramod Malatkar , Mathew J Manusharow
- Applicant: Ravi K Nalla , Pramod Malatkar , Mathew J Manusharow
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.
Public/Granted literature
- US20120074580A1 METHODS OF FORMING FULLY EMBEDDED BUMPLESS BUILD-UP LAYER PACKAGES AND STRUCTURES FORMED THEREBY Public/Granted day:2012-03-29
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