Invention Grant
- Patent Title: Thermistor element
- Patent Title (中): 热敏电阻元件
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Application No.: US13212678Application Date: 2011-08-18
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Publication No.: US08305185B2Publication Date: 2012-11-06
- Inventor: Hirokazu Kobayashi , Masao Kabuto , Masahiro Kobayashi
- Applicant: Hirokazu Kobayashi , Masao Kabuto , Masahiro Kobayashi
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: JP2010-189942 20100826
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A highly-reliable thermistor element even when used at a relatively high temperature comprising; element body incorporating two or more internal electrode layers arranging thermistor layer in-between, a pair of terminal electrodes each connected to the mutually faced internal electrode layers and formed on exterior surface of the element body, and lead terminal connected to the terminal electrode, characterized in that the thermistor layer comprises oxide expressed by a composition formula YaCabCrcAldM1eO3 and the thermistor layer substantially does not include Sr or Mn.
Public/Granted literature
- US20120049996A1 THERMISTOR ELEMENT Public/Granted day:2012-03-01
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