Invention Grant
- Patent Title: Film-like article and method for manufacturing the same
- Patent Title (中): 薄膜状制品及其制造方法
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Application No.: US10586049Application Date: 2005-01-20
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Publication No.: US08305213B2Publication Date: 2012-11-06
- Inventor: Yasuyuki Arai , Mai Akiba , Yohei Kanno , Yuko Tachimura
- Applicant: Yasuyuki Arai , Mai Akiba , Yohei Kanno , Yuko Tachimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-015537 20040123
- International Application: PCT/JP2005/001040 WO 20050120
- International Announcement: WO2005/071607 WO 20050804
- Main IPC: G08B13/14
- IPC: G08B13/14

Abstract:
Since the chip formed from a silicon wafer is thick, the chip is protruded from the surface or the chip is so large that it can be seen through the eyes, which affects the design of a business card or the like. Hence, it is an object of the present invention to provide a new integrated circuit which has a structure by which the design is not affected. In view of the above problems, it is a feature of the invention to equip a film-like article with a thin film integrated circuit. It is another feature of the invention that the IDF chip has a semiconductor film of 0.2 mm or less, as an active region. Therefore, the IDF chip can be made thinner as compared with a chip formed from a silicon wafer. In addition, such an integrated circuit can have light transmitting characteristic unlike a chip formed from a silicon wafer.
Public/Granted literature
- US20070159353A1 Film-like article and method for manufacturing the same Public/Granted day:2007-07-12
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