Invention Grant
US08305507B2 Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
有权
具有改善的存储电容的薄膜晶体管阵列面板及其制造方法
- Patent Title: Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
- Patent Title (中): 具有改善的存储电容的薄膜晶体管阵列面板及其制造方法
-
Application No.: US11356853Application Date: 2006-02-17
-
Publication No.: US08305507B2Publication Date: 2012-11-06
- Inventor: Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
- Applicant: Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2005-0015914 20050225; KR10-2005-0034964 20050427
- Main IPC: G02F1/1343
- IPC: G02F1/1343

Abstract:
A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
Public/Granted literature
- US20060192906A1 Thin film transistor array panel and manufacturing method thereof Public/Granted day:2006-08-31
Information query
IPC分类: