Invention Grant
US08305794B2 Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM4x8 type with an electronic data rewritable non volatile memory, and corresponding material
有权
使用具有AM4x8类型的过渡元素的四面体聚集体的空隙尖晶石与电子数据可重写非易失性存储器以及相应的材料
- Patent Title: Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM4x8 type with an electronic data rewritable non volatile memory, and corresponding material
- Patent Title (中): 使用具有AM4x8类型的过渡元素的四面体聚集体的空隙尖晶石与电子数据可重写非易失性存储器以及相应的材料
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Application No.: US12526984Application Date: 2008-03-12
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Publication No.: US08305794B2Publication Date: 2012-11-06
- Inventor: Laurent Cario , Benoit Corraze , Etienne Janod , George Christian Vaju , Marie-Paule Besland
- Applicant: Laurent Cario , Benoit Corraze , Etienne Janod , George Christian Vaju , Marie-Paule Besland
- Applicant Address: FR Cedex
- Assignee: Universite De Nantes
- Current Assignee: Universite De Nantes
- Current Assignee Address: FR Cedex
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Priority: FR0701819 20070314
- International Application: PCT/EP2008/052968 WO 20080312
- International Announcement: WO2008/113734 WO 20080925
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A includes at least one of the following elements: Ga, Ge, Zn; M includes at least one of the following elements: V, Nb, Ta, Mo; and X includes at least one of the following elements: S, Se.
Public/Granted literature
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