A flash memory device and method of reading data are disclosed. The method includes; performing a test read operation directed to test data stored in a memory cell array of the flash memory device by iteratively applying a sequence of test read retry operations, wherein each successive test read retry operation uses a respectively higher test read voltage level than a preceding test read retry operation, until one test read retry operation in the sequence of test read retry operations successfully reads the test data using a minimum test read retry voltage associated with the one test read retry operation, setting an initial read voltage for the flash memory device equal to the minimum test read retry voltage, and thereafter performing a normal read operation directed to user data stored in the memory cell array by iteratively applying a sequence of read retry operations, wherein an initial read retry operation in the sequence of read retry operations uses the initial read voltage.