Invention Grant
US08305816B2 Method of controlling a memory cell of non-volatile memory device
有权
控制非易失性存储器件的存储单元的方法
- Patent Title: Method of controlling a memory cell of non-volatile memory device
- Patent Title (中): 控制非易失性存储器件的存储单元的方法
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Application No.: US12222895Application Date: 2008-08-19
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Publication No.: US08305816B2Publication Date: 2012-11-06
- Inventor: Ki-tae Park , Ki-nam Kim , Yeong-taek Lee
- Applicant: Ki-tae Park , Ki-nam Kim , Yeong-taek Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse
- Priority: KR10-2007-0083446 20070820
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A method of controlling data includes, with respect to non-volatile memory cells connected to bit lines corresponding to a first bit line group, first controlling data written to the non-volatile memory cells by varying a control voltage, and, with respect to non-volatile memory cells connected to bit lines corresponding to a second bit line group, second controlling data written to the non-volatile memory cells by varying a control voltage. The controlling may include reading or verifying. Before verification, the method may include writing data to the non-volatile memory cells.
Public/Granted literature
- US20090052243A1 Method of controlling a memory cell of non-volatile memory device Public/Granted day:2009-02-26
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