Invention Grant
US08305816B2 Method of controlling a memory cell of non-volatile memory device 有权
控制非易失性存储器件的存储单元的方法

Method of controlling a memory cell of non-volatile memory device
Abstract:
A method of controlling data includes, with respect to non-volatile memory cells connected to bit lines corresponding to a first bit line group, first controlling data written to the non-volatile memory cells by varying a control voltage, and, with respect to non-volatile memory cells connected to bit lines corresponding to a second bit line group, second controlling data written to the non-volatile memory cells by varying a control voltage. The controlling may include reading or verifying. Before verification, the method may include writing data to the non-volatile memory cells.
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