Invention Grant
- Patent Title: Dual rail memory
- Patent Title (中): 双轨内存
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Application No.: US12835197Application Date: 2010-07-13
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Publication No.: US08305827B2Publication Date: 2012-11-06
- Inventor: Derek C. Tao , Kuoyuan (Peter) Hsu , Dong Sik Jeong , Young Suk Kim , Young Seog Kim , Yukit Tang
- Applicant: Derek C. Tao , Kuoyuan (Peter) Hsu , Dong Sik Jeong , Young Suk Kim , Young Seog Kim , Yukit Tang
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A memory array comprises a plurality of memory cells arranged in a plurality of rows and a plurality of columns. A column of the plurality of columns includes a first power supply node configured to provide a first voltage, a second power supply node configured to provide a second voltage, and a plurality of internal supply nodes electrically coupled together and configured to receive the first voltage or the second voltage for a plurality of memory cells in the column and a plurality of internal ground nodes. The internal ground nodes are electrically coupled together and configured to provide at least two current paths for the plurality of memory cells in the column.
Public/Granted literature
- US20120014201A1 DUAL RAIL MEMORY Public/Granted day:2012-01-19
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