Invention Grant
- Patent Title: Power management
- Patent Title (中): 能源管理
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Application No.: US12885826Application Date: 2010-09-20
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Publication No.: US08305831B2Publication Date: 2012-11-06
- Inventor: Cheng Hung Lee , Chung-Yi Wu , Hsu-Shun Chen , Chung-Ji Lu
- Applicant: Cheng Hung Lee , Chung-Yi Wu , Hsu-Shun Chen , Chung-Ji Lu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An SRAM includes circuitry configured for the SRAM to operate at different operation modes using different voltage levels wherein the voltage level and thus the supply current leakage is regulated based on the operation mode. For example, the SRAM, in a normal operation mode, consumes power as other SRAMs. In a deep sleep mode the supply voltage (e.g., VDDI) for the bit cell in the SRAM macro is lowered by about 20-40% of the SRAM supply voltage (e.g., VDD), sufficient to retain the data in the bit cell. When access to the SRAM is not needed, the SRAM operates in the sleep mode, consuming little or no power.
Public/Granted literature
- US20110090753A1 POWER MANAGEMENT Public/Granted day:2011-04-21
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