Invention Grant
- Patent Title: Integrated circuits, systems, and methods for reducing leakage currents in a retention mode
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Application No.: US13397102Application Date: 2012-02-15
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Publication No.: US08305832B2Publication Date: 2012-11-06
- Inventor: Yen-Huei Chen , Cheng Hung Lee
- Applicant: Yen-Huei Chen , Cheng Hung Lee
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An integrated circuit includes at least one memory array for storing data. A first switch is coupled with the memory array. A first power line is coupled with the first switch. The first power line is operable to supply a first power voltage. A second switch is coupled with the memory array. A second power line is coupled with the second switch. The second power line is operable to supply a second power voltage for retaining the data during a retention mode. A third power line is coupled with the memory array. The third power line is capable of providing a third power voltage.
Public/Granted literature
- US20120147688A1 INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE Public/Granted day:2012-06-14
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