Invention Grant
US08305834B2 Semiconductor memory with memory cell portions having different access speeds
失效
具有存储单元部分的半导体存储器具有不同的存取速度
- Patent Title: Semiconductor memory with memory cell portions having different access speeds
- Patent Title (中): 具有存储单元部分的半导体存储器具有不同的存取速度
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Application No.: US12710800Application Date: 2010-02-23
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Publication No.: US08305834B2Publication Date: 2012-11-06
- Inventor: Michael Richter , Markus Balb , Christoph Bilger , Martin Brox , Peter Gregorius , Thomas Hein , Andreas Schneider
- Applicant: Michael Richter , Markus Balb , Christoph Bilger , Martin Brox , Peter Gregorius , Thomas Hein , Andreas Schneider
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
Public/Granted literature
- US20110205828A1 SEMICONDUCTOR MEMORY WITH MEMORY CELL PORTIONS HAVING DIFFERENT ACCESS SPEEDS Public/Granted day:2011-08-25
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