Invention Grant
US08307262B2 Data read-out circuit in semiconductor memory device and method of data reading in semiconductor memory device
有权
半导体存储器件中的数据读出电路和半导体存储器件中的数据读取方法
- Patent Title: Data read-out circuit in semiconductor memory device and method of data reading in semiconductor memory device
- Patent Title (中): 半导体存储器件中的数据读出电路和半导体存储器件中的数据读取方法
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Application No.: US13306229Application Date: 2011-11-29
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Publication No.: US08307262B2Publication Date: 2012-11-06
- Inventor: Satoru Oku
- Applicant: Satoru Oku
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-226502 20060823
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A data read-out circuit is provided with a sense amplifier circuit and a selector. The sense amplifier circuit senses a stored data stored in a memory cell array by using a plurality of reference levels to generate a plurality of read data, respectively. Thus, the sense amplifier circuit outputs the plurality of read data with regard to the stored data. The selector selects a data corresponding to any one of the plurality of read data based on a control signal and outputs the selected data as an output data.
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