A method of manufacturing an integrated circuit having minimized electromigration effect, wherein the integrated circuit comprises one or more interconnect, said the or each interconnect comprising a dielectric layer having an intrinsic parameter at a first defined value, characterized in that said method comprises: identifying one or more characteristics of the or each interconnect; determining a minimal process distance from the or each interconnect for the application of one or more first metal elements; calculating a required correction parameter which can correct the intrinsic parameter at said first defined value; calculating a required number of the first metal elements which have the intrinsic parameter at a second defined value, such that the second defined value provides the required correction parameter for the first defined value; applying a plurality of said first metal elements around the interconnect at said minimum process distance to overcome the problem of electromigration caused by the intrinsic parameter at the first defined value.