Invention Grant
- Patent Title: Method for dummy metal and dummy via insertion
- Patent Title (中): 虚拟金属和虚拟通孔插入方法
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Application No.: US12728728Application Date: 2010-03-22
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Publication No.: US08307321B2Publication Date: 2012-11-06
- Inventor: Hung-Yi Liu , Chung-Hsing Wang , Chih-Chieh Chen , Jian-Yi Li
- Applicant: Hung-Yi Liu , Chung-Hsing Wang , Chih-Chieh Chen , Jian-Yi Li
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F9/455

Abstract:
A method for dummy metal and dummy via insertion is provided. In one embodiment, dummy metals are inserted using a place and route tool, where the place and route tool has timing-awareness. Then, dummy vias arrays are inserted inside an overlap area of dummy metals using a design-rule-checking utility. Fine-grained dummy vias arrays are inserted in available space far away from main patterns. The dummy-patterns resulting from the inserted dummy vias are compressed using the design-rule-checking utility to reduce the size of a graphic data system file generated from the integrated circuit design. The dummy vias can be inserted with relaxed via spacing rules. The dummy metals are inserted with a constant line-end spacing between them for better process control and the maximum length of the dummy metal can be limited for smaller coupling effects. The dummy vias can have various sizes and a square or rectangular shape.
Public/Granted literature
- US20100242008A1 METHOD FOR DUMMY METAL AND DUMMY VIA INSERTION Public/Granted day:2010-09-23
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