Invention Grant
US08309441B2 Process for eliminating delamination between amorphous silicon layers 有权
消除非晶硅层之间的分层的方法

Process for eliminating delamination between amorphous silicon layers
Abstract:
One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
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