Invention Grant
- Patent Title: Process for eliminating delamination between amorphous silicon layers
- Patent Title (中): 消除非晶硅层之间的分层的方法
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Application No.: US13176548Application Date: 2011-07-05
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Publication No.: US08309441B2Publication Date: 2012-11-13
- Inventor: Jiou-Kang Lee , Chun-Ren Cheng , Shang-Ying Tsai , Ting-Hau Wu , Hsiang-Fu Chen
- Applicant: Jiou-Kang Lee , Chun-Ren Cheng , Shang-Ying Tsai , Ting-Hau Wu , Hsiang-Fu Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
Public/Granted literature
- US20110263106A1 Process for Eliminating Delamination between Amorphous Silicon Layers Public/Granted day:2011-10-27
Information query
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