Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11646443Application Date: 2006-12-28
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Publication No.: US08309999B2Publication Date: 2012-11-13
- Inventor: Wensheng Wang
- Applicant: Wensheng Wang
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-231966 20060829
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
The method includes the steps of forming an upper electrode of a capacitor by patterning a second conductive film; forming a capacitor dielectric film by patterning a ferroelectric film; and forming a lower electrode by patterning a first conductive film. A step of forming the first conductive film includes the steps of forming a lower conductive layer made of a noble metal other than iridium over a first interlayer insulating film; and forming an upper conductive layer made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.
Public/Granted literature
- US20080054328A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-03-06
Information query
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