Invention Grant
- Patent Title: Solid-state imaging device with vertical gate electrode and method of manufacturing the same
- Patent Title (中): 具有垂直栅电极的固态成像装置及其制造方法
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Application No.: US12509810Application Date: 2009-07-27
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Publication No.: US08310003B2Publication Date: 2012-11-13
- Inventor: Yusuke Kohyama
- Applicant: Yusuke Kohyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-198274 20080731
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A charge accumulation region of a first conductivity type is buried in a semiconductor substrate. A charge transfer destination diffusion layer of the first conductivity type is formed on a surface of the semiconductor substrate. A transfer gate electrode is formed on the charge accumulation region, and charge is transferred from the charge accumulation region to the charge transfer destination diffusion layer.
Public/Granted literature
- US20100025738A1 SOLID-STATE IMAGING DEVICE WITH VERTICAL GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-02-04
Information query
IPC分类:
