Invention Grant
- Patent Title: Semiconductor integrated circuit device and communication system
- Patent Title (中): 半导体集成电路器件和通信系统
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Application No.: US12886700Application Date: 2010-09-21
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Publication No.: US08310311B2Publication Date: 2012-11-13
- Inventor: Junji Wadatsumi
- Applicant: Junji Wadatsumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2010-52965 20100310
- Main IPC: H03F1/38
- IPC: H03F1/38
Abstract:
According to an embodiment, a semiconductor integrated circuit device includes an amplifier and a feedback circuit. The amplifier includes an input terminal receiving an input signal and an output terminal outputting an output signal. The feedback circuit includes a first transistor generating a bias current. The feedback circuit is configured to operate based on the bias current. The feedback circuit is configured to receive the output signal to supply a feedback signal to the input terminal. A signal having a reverse phase to the output signal is input to a gate of the first transistor.
Public/Granted literature
- US20110221532A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND COMMUNICATION SYSTEM Public/Granted day:2011-09-15
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