A non-volatile memory device includes a cell array configured to read or write data, a local column switch configured to selectively connect a bit line of the cell array to a global bit line in response to a column selection signal, a global column switch configured to selectively connect the global bit line to a sense-amp in response to an enable signal, and a switching unit configured to selectively connect or sever a current path of the global column switch in response to a control signal corresponding to a bank active operation.