Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12801652Application Date: 2010-06-18
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Publication No.: US08310889B2Publication Date: 2012-11-13
- Inventor: Akihiro Banno
- Applicant: Akihiro Banno
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-196332 20090827
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device including a plurality of memory cells arranged in a matrix pattern, a write amplifier which writes write data to the memory cell in synchronization with a clock, a sense amplifier which reads out the write data written in the memory cell in synchronization with the clock, a plurality of column select switches which connect the plurality of the memory cells with the sense amplifier and the write amplifier, a column address decoder which makes the column select switch corresponding to one column among the plurality of the memory cells a conductive state based on a column address, a row address decoder which activates the memory cell of one row based on a row address, and a test write circuit which writes data corresponding to a logical level of a test signal to the memory cell based on a test mode signal.
Public/Granted literature
- US20110051541A1 Semiconductor device Public/Granted day:2011-03-03
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