Invention Grant
US08312203B2 Semiconductor storage device and method of controlling a semiconductor storage device by allocating a physical block composed of plural pages to a group of logical addresses 有权
半导体存储装置以及通过将由多页构成的物理块分配给一组逻辑地址来控制半导体存储装置的方法

  • Patent Title: Semiconductor storage device and method of controlling a semiconductor storage device by allocating a physical block composed of plural pages to a group of logical addresses
  • Patent Title (中): 半导体存储装置以及通过将由多页构成的物理块分配给一组逻辑地址来控制半导体存储装置的方法
  • Application No.: US12017615
    Application Date: 2008-01-22
  • Publication No.: US08312203B2
    Publication Date: 2012-11-13
  • Inventor: Nagamasa Mizushima
  • Applicant: Nagamasa Mizushima
  • Applicant Address: JP Tokyo
  • Assignee: Hitachi, Ltd.
  • Current Assignee: Hitachi, Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Brundidge & Stanger, P.C.
  • Priority: JP2007-231640 20070906
  • Main IPC: G06F12/02
  • IPC: G06F12/02
Semiconductor storage device and method of controlling a semiconductor storage device by allocating a physical block composed of plural pages to a group of logical addresses
Abstract:
In a semiconductor storage device, a memory controller divides each of blocks in each of chips into a first page set composed of pages and a second page set composed of pages, divides a logical address space into groups, and divides each group into lines. Block units are created each of which is obtained by assembling a predetermined number of blocks from the blocks in each chip. A predetermined number of block units from the block units are managed as standard block units, and the other block units are managed as spare block units. Each standard block unit is made to correspond to one group. The corresponding group data is stored in the pages in the first page set in each block constituting the standard block unit, and unwritten pages for recording update data for the group data are provided to be included in the second page set.
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