Method for manufacturing a semiconductor device

Invention Grant

US08313995B2 Method for manufacturing a semiconductor device 有权

Title translation: 半导体器件的制造方法

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Patent Title: Method for manufacturing a semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US13005694

Application Date: 2011-01-13
Publication No.: US08313995B2

Publication Date: 2012-11-20
Inventor: Martin Poelzl
Applicant: Martin Poelzl
Applicant Address: AT Villach
Assignee: Infineon Technologies Austria AG
Current Assignee: Infineon Technologies Austria AG
Current Assignee Address: AT Villach
Agency: Murphy, Bilak & Hamiller, PLLC
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/20

Method for manufacturing a semiconductor device

Abstract:

A method for forming a semiconductor device is provided. The method includes providing a semiconductor body with a horizontal surface. An epitaxy hard mask is formed on the horizontal surface. An epitaxial region is formed by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask. A vertical trench is formed in the semiconductor body. An insulated field plate is formed in a lower portion of the vertical trench and an insulated gate electrode is formed above the insulated field plate. Further, a method for forming a field-effect semiconductor device is provided.

Abstract(Chinese):

提供一种形成半导体器件的方法。该方法包括提供具有水平表面的半导体本体。在水平面上形成外延硬掩模。通过在水平表面上相对于外延硬掩模的选择性外延形成外延区域，使得外延区域被调整到外延硬掩模。在半导体本体中形成垂直沟槽。绝缘场板形成在垂直沟槽的下部，绝缘栅电极形成在绝缘场板的上方。此外，提供了一种用于形成场效应半导体器件的方法。

Public/Granted literature

US20120184095A1 Method for Manufacturing a Semiconductor Device Public/Granted day:2012-07-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）