Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12901005Application Date: 2010-10-08
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Publication No.: US08314018B2Publication Date: 2012-11-20
- Inventor: Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
- Applicant: Akihisa Shimomura , Naoki Okuno , Masaki Koyama , Yasuhiro Jinbo
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-237928 20091015
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/46
Abstract:
A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
Public/Granted literature
- US20110092050A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-04-21
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