Invention Grant
- Patent Title: Scanning electron microscope
- Patent Title (中): 扫描电子显微镜
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Application No.: US12926726Application Date: 2010-12-07
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Publication No.: US08314387B2Publication Date: 2012-11-20
- Inventor: Chang Hoon Choi , Vyacheslav Vasil'evich Kazmiruk , Mikhail Yur'evich Barabanenkov , Dmitry Vladimirovich Tsisar
- Applicant: Chang Hoon Choi , Vyacheslav Vasil'evich Kazmiruk , Mikhail Yur'evich Barabanenkov , Dmitry Vladimirovich Tsisar
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: RU2009145477 20091209; KR10-2010-117425 20101124
- Main IPC: G01N23/00
- IPC: G01N23/00

Abstract:
Example embodiments are directed to a scanning electron microscope. The scanning electron microscope includes an electron gun to configured irradiate an electron beam on a sample, and a disc of a transparent material and including a through-hole through which the electron beam passes. The disc includes a scintillator layer formed at a surface thereof so as to generate photons based on the secondary electrons received from the sample. A reflecting layer is formed at an inner peripheral surface of the through-hole so as to reflect the photons, thereby preventing leakage of the photons via the through-hole.
Public/Granted literature
- US20110133082A1 Scanning electron microscope Public/Granted day:2011-06-09
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