Invention Grant
- Patent Title: Variable ring width SDD
- Patent Title (中): 可变环宽SDD
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Application No.: US12617313Application Date: 2009-11-12
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Publication No.: US08314468B2Publication Date: 2012-11-20
- Inventor: Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
- Applicant: Derek Hullinger , Hideharu Matsuura , Kazuo Taniguchi , Tadashi Utaka
- Applicant Address: US UT Orem
- Assignee: Moxtek, Inc.
- Current Assignee: Moxtek, Inc.
- Current Assignee Address: US UT Orem
- Agency: Thorpe North & Western LLP
- Priority: JP2009-157627 20090702
- Main IPC: H01L31/115
- IPC: H01L31/115
Abstract:
A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
Public/Granted literature
- US20100314706A1 VARIABLE RING WIDTH SDD Public/Granted day:2010-12-16
Information query
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