Invention Grant
- Patent Title: MEMS device and method of manufacturing the same
- Patent Title (中): MEMS器件及其制造方法
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Application No.: US12724998Application Date: 2010-03-16
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Publication No.: US08315030B2Publication Date: 2012-11-20
- Inventor: Hiroaki Yamazaki
- Applicant: Hiroaki Yamazaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-151246 20090625
- Main IPC: H01Q7/00
- IPC: H01Q7/00

Abstract:
A MEMS device of an aspect of the present invention including a MEMS element includes a first lower electrode provided on a substrate, a first insulator which is provided on the upper surface of the first lower electrode, and has a first thickness, and a movable first upper electrode supported by an anchor in midair above the first lower electrode, and a capacitance element includes a second lower electrode provided on the substrate, a second insulator which is provided on the upper surface of the second lower electrode, and has a second thickness, and a second upper electrode provided on the second insulator, wherein the second thickness is less than the first thickness.
Public/Granted literature
- US20100328840A1 MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-12-30
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